Control of ion energy distributions using a pulsed plasma with synchronous bias on a boundary electrode
نویسندگان
چکیده
Ion energy distributions (IEDs) on a grounded substrate in a Faraday-shielded argon inductively coupled plasma were measured with a retarding field energy analyzer. A Langmuir probe was also used to measure spaceand time-resolved plasma parameters. IEDs and plasma parameters were studied with continuous or pulsed positive dc bias voltage on a ‘boundary electrode’ in contact with the plasma. For continuous wave plasmas without applied bias, the IED exhibited a single broad peak at the plasma potential. Applying a continuous positive dc bias on the boundary electrode shifted the peak of the IED to higher energy. Application of a synchronous dc bias on the boundary electrode during the afterglow of a pulsed plasma resulted in a double-peaked IED. The mean energies of the two peaks, as well as the peak separation, were controlled by adjusting the applied dc bias and the discharge pressure. The full width at half maximum (FWHM) of the peak corresponding to the synchronous dc bias diminished with decreasing electron temperature. The FWHM was controlled by varying the time window in the afterglow during which dc bias was applied. (Some figures in this article are in colour only in the electronic version)
منابع مشابه
Ion energy distributions in inductively coupled plasmas having a biased boundary electrode
In plasma materials processing there is a continuing need to control the ion energy distributions (IEDs) on surfaces to increasing precision. A recent development in obtaining this control in inductively coupled plasmas (ICPs) is the use of a boundary electrode in which a continuous or pulsed dc bias is applied to the plasma. The characteristics of IEDs onto a grounded substrate in ICPs having ...
متن کاملREVIEW ARTICLE Tailored ion energy distributions on plasma electrodes
As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy dist...
متن کاملPulsed plasma etching for semiconductor manufacturing
Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching ...
متن کاملParticle-in-cell simulation of ion energy distributions on an electrode by applying tailored bias waveforms in the afterglow of a pulsed plasma
A Particle-in-Cell simulation with Monte Carlo Collisions (PIC-MCC) was conducted of the application of tailored DC voltage steps on an electrode, during the afterglow of a capacitively-coupled pulsed-plasma argon discharge, to control the energy of ions incident on the counter-electrode. Staircase voltage waveforms with selected amplitudes and durations resulted in ion energy distributions (IE...
متن کاملRole of the blocking capacitor in control of ion energy distributions in pulsed capacitively coupled plasmas sustained in Ar/CF4/O2
In plasma etching for microelectronics fabrication, the quality of the process is in large part determined by the ability to control the ion energy distribution (IED) onto the wafer. To achieve this control, dual frequency capacitively coupled plasmas (DF-CCPs) have been developed with the goal of separately controlling the magnitude of the fluxes of ions and radicals with the high frequency (H...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011